Observation of electron polarization above 80% in photoemission from strained III-V compounds

摘要

Spin-polarized electron photoemission has been investigated for strained III--V compounds; (1) strained In(sub x)Ga(sub 1-x)As epitaxially grown on a GaAs substrate, and (2) strained GaAs grown on a GaAs(sub 1-x)P(sub x) buffer layer. The lattice mismatched heterostructure results in a highly strained epitaxial layer, and electron spin polarization as high as 90% has been observed.