Thermodynamics on hydride vapor phase epitaxy of AIN using AlCl3 and NH3

摘要

A thermodynamic analysis on hydride vapor phase epitaxy (HYPE) of AlN using AlCl3 and NH3 was performed. Regardless of the carrier gas used, partial pressures of Al-containing gaseous species [AlCl3, AlCl2, AlCl and (AlCl3)(2)] in equilibrium with AlN are significantly low in the temperature range of 500-1500 degrees C when the input VIII ratio is above 1. This means that the driving force for AN growth (Delta P-A1) becomes almost equal to the input partial pressure of AlCl3, which is quite different from HYPE of GaN. The good agreement between the calculated and experimental growth rates shows that HVPE of AlN is thermodynamically controlled.