Reduction of dislocation mobility in Ge_xS_(i-x) epilayers

摘要

A new method is presented that allows reduction in the dislocation mobility in GexSi1-x layers on Si by application of a load opposing the misfit stress in the layers. Results are given for layers with a Ge mole fraction x = 0.016 and x = 0.022 and layer thicknesses of 0 .42- 0.9 mum.