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机译:在多孔GaAs衬底上生长的InGaAs外延层中错配位错的减少
Physics Department, Aristotle University of Thessaloniki, GR 541 24 Thessaloniki, Greece;
Physics Department, Aristotle University of Thessaloniki, GR 541 24 Thessaloniki, Greece;
Institute of Photonics and Electronics, Academy of Sciences CR, v.v.i., Chaberska 57, 18251 Praha 8, Czech Republic;
Institute of Photonics and Electronics, Academy of Sciences CR, v.v.i., Chaberska 57, 18251 Praha 8, Czech Republic;
Institute of Physics, Academy of Sciences CR, v.v.i., Cukrovarnicka 10, 16200 Praha 6, Czech Republic;
Institute of Physics, Academy of Sciences CR, v.v.i., Cukrovarnicka 10, 16200 Praha 6, Czech Republic;
Institute of Physics, Academy of Sciences CR, v.v.i., Cukrovarnicka 10, 16200 Praha 6, Czech Republic;
Physics Department, Aristotle University of Thessaloniki, GR 541 24 Thessaloniki, Greece;
Compound semiconductors; InGaAs; Porous substrate; Misfit dislocations; Strain;
机译:界面失配位错生长方式对金属有机化学气相沉积在GaAs衬底上生长的高度晶格失配的In_xGa_(1-x)Sb外延层的影响
机译:在GaAs衬底上生长的In_(0.2)Ga_(0.8)As外延层中失配位错的成核
机译:GaAs / Ingaas超晶格在GaAs(001)基板上的透射电子显微镜调查
机译:锑气氛对MOCVD法在GaAs衬底上生长的GaSb外延层中界面失配位错阵列的影响
机译:减少在GaAs底物上生长在GaAs底物上的喘气脱位,用于光伏和蒸煮器应用
机译:具有周期性90°错配位错界面阵列的GaAs衬底上生长的高弛豫GaSb的结构分析
机译:由分子束外延生长的InGaAs / GaAs异质结构中非均匀位错产生的错位及其临界厚度
机译:在未对准的Gaas(001)衬底上研究mBE生长的InGaas层中的错配位错构型