Minority carrier recombination lifetimes in n-type CdMgSe mixed crystals measured by means of the photothermal infrared radiometry

摘要

Minority recombination lifetimes of n?type CdMgSe mixed crystals were estimated by using infrared photothermal radiometry (PTR) amplitude and phase frequency spectra. The results obtained by the PTR method indicate that the lifetimes of optically generated carriers in CdSe and Cd_xMg_(1–x)Se crystals are about 0.1 μs. The diffusion length of minority carrier in n?type CdSe single crystal was found to be 4.42 μm and it is in a good agreement with the literature value. It was found that with the increasing thermal?to?plasma component coefficient A the carrier concentration increases as expected from PTR theory.