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Method of measuring the effective lifetime of excessive minority carriers and effective lifetime measuring apparatus of excess minority carriers

机译:多余的少数载流子的有效寿命的测定方法和多余的少数载流子的有效寿命的测定装置

摘要

PROBLEM TO BE SOLVED: To provide a method and a device for measuring an effective lifetime of excess minority carriers, capable of measuring the effective lifetime of the excess minority carriers with ease and high accuracy.SOLUTION: Disclosed is a method for measuring an effective lifetime of excess minority carriers which includes: a first step of changing intensity of light irradiated to a semiconductor to measure photoconductivity; a second step of specifying a non-trapping region which is a region where influence due to trapping of excessive minority carriers can be ignored using a relationship between the light intensity and the photoconductivity; and a third step of obtaining the effective lifetime of the excessive minority carriers using a value of the photoconductivity in the non-trapping region.SELECTED DRAWING: Figure 1
机译:解决的问题:提供一种测量多余的少数载流子的有效寿命的方法和装置,其能够容易且高精度地测量多余的少数载流子的有效寿命。解决方案:公开了一种测量有效寿命的方法。过量的少数载流子,包括:改变照射到半导体的光的强度以测量光电导的第一步;第二步骤,确定非捕获区域,该区域是利用光强度和光电导率之间的关系可以忽略由于捕获过多的少数载流子而产生的影响的区域;第三步是使用非俘获区中的光电导率值获得过量少数载流子的有效寿命。选图:图1

著录项

  • 公开/公告号JP6382747B2

    专利类型

  • 公开/公告日2018-08-29

    原文格式PDF

  • 申请/专利权人 京セラ株式会社;

    申请/专利号JP20150036812

  • 发明设计人 吉川 博道;中山 明;

    申请日2015-02-26

  • 分类号H01L21/66;

  • 国家 JP

  • 入库时间 2022-08-21 13:09:10

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