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Method for measuring effective lifetime of excess minority carrier and apparatus for measuring effective lifetime of excess minority carrier

机译:测量多余的少数载具的有效寿命的方法和测量多余的少数载具的有效寿命的设备

摘要

PROBLEM TO BE SOLVED: To provide an effective lifetime measurement method for an excess minority carrier capable of highly accurately calculating the effective lifetime of the excess minority carrier, and an effective lifetime measurement device for the excess minority carrier.SOLUTION: An effective lifetime measurement method for an excess minority carrier includes: a first step of measuring photoconductivity σof a semiconductor while changing an irradiation light intensity Iof a light with which the semiconductor is irradiated, and obtaining multiple plot points indicating a relationship between the irradiation light intensity σand the photoconductivity σof the semiconductor; a second step of calculating an approximate straight line for each of multiple aggregates 1 consisting of continuous multiple plot points, calculating photoconductivity σin a case where the irradiation light intensity Iis 0 in the multiple approximate straight lines, and defining a maximum value of the photoconductivity as photoconductivity σcaused by trapping of the excess minority carrier; and a third step of using the photoconductivity σcaused by the trapping to calculate an effective lifetime τ of the excess minority carrier.SELECTED DRAWING: Figure 1
机译:要解决的问题:提供一种能够有效地准确计算过量少数载流子的有效寿命的过量少数载流子的有效寿命测量方法,以及一种用于过量少数载流子的有效寿命测量设备。用于过量的少数载流子的步骤包括:第一步,在改变半导体所照射的光的照射光强度I的同时测量半导体的光电导率σ,并获得指示照射光强度σ与光电导率σ之间的关系的多个标绘点。半导体;第二步骤是对由连续的多个绘图点组成的多个集合体1的每一个计算近似直线,在多个近似直线中照射光强度I为0的情况下计算光电导率σ,并且将光电导率的最大值定义为捕获过多的少数载流子引起的光电导率σ;第三步是利用俘获引起的光电导率σ计算多余的少数载流子的有效寿命τ。图1

著录项

  • 公开/公告号JP6748008B2

    专利类型

  • 公开/公告日2020-08-26

    原文格式PDF

  • 申请/专利权人 京セラ株式会社;

    申请/专利号JP20170054538

  • 发明设计人 豊倉 祥太;中山 明;

    申请日2017-03-21

  • 分类号H01L21/66;

  • 国家 JP

  • 入库时间 2022-08-21 11:33:57

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