Atomic vapor deposition of titanium nitride as metal electrodes for gate-last CMOS and MIM devices

摘要

Pure and diluted Ti[N(Et)(2)](4) precursors are used to grow TiN layers at 400-600 degrees C by using atomic vapor deposition (AVD (R)). The composition, microstructure, and electrical properties of TiN films with various thicknesses are investigated. The determined work function of 4.7eV indicates the possibility of using AVD (R)-grown TiN as a metal gate electrode for PMOSFET and metal-insulator-metal (MIM) devices. TiN/HfO2/SiO2 stacks are integrated into gate-last PMOS transistors, and the extracted parameters are compared to poly-Si/SiO2 reference transistors. The optimized films grown at 400 degrees C with a thickness of 20 nm exhibit a resistivity of 400 mu Omega cm.