首页>
外国专利>
METHOD OF FORMING TITANIUM ALUMINUM NITRIDE LAYER(TIALN) BY ATOMIC LAYER DEPOSITION AND PHASE CHANGE MEMORY DEVICE HAVING HEATING ELECTRODE FABRICATED BY USING THE SAME
METHOD OF FORMING TITANIUM ALUMINUM NITRIDE LAYER(TIALN) BY ATOMIC LAYER DEPOSITION AND PHASE CHANGE MEMORY DEVICE HAVING HEATING ELECTRODE FABRICATED BY USING THE SAME
展开▼
机译:原子层沉积和相变存储器件采用相同方法制造的加热电极形成氮化钛铝层的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A thin film layer, a heating electrode, a phase change memory including the thin film layer, and methods for forming the same. The method of forming the thin film layer by atomic layer deposition (ALD) may include injecting a titanium (Ti) source, a nitrogen (N) source, and/or an aluminum (Al) source onto a substrate at different flow rates and for different periods of time. The heating electrode may include a Ti1-xAlxN layer, wherein x is about 0.4x0.5 at a first portion of the heating electrode contacting a phase change layer and 0x0.1 at other portions of the heating electrode. The phase change memory may include the heating electrode including the Ti1-xAlxN layer, an insulating layer formed on the heating electrode and having a contact hole exposing the heating electrode and the phase change layer contacting the first portion of the heating electrode.
展开▼