Method for forming titanium-nitride layer by atomic layer deposition and method for fabricating capacitor using the same

摘要

PURPOSE: A method for forming a titanium nitride layer using an ALD(Atomic Layer Deposition) and a method for manufacturing a capacitor using the same are provided to be capable of preventing the deterioration of leakage current characteristic and capacitance characteristic due to source gas exposed to the surface of a dielectric layer by flushing the surface of the dielectric layer using NH3 gas. CONSTITUTION: A lower electrode(21) made of the first TiN layer is formed at the upper portion of a semiconductor substrate(11). A dielectric layer(22) made of a Ta2O5 layer is formed on the lower electrode. Then, the surface of the dielectric layer is nitrified by flushing the surface using NH3 gas of 100-3000 sccm for 20-60 seconds. An upper electrode made of the second TiN layer is formed on the nitrified dielectric layer by carrying out an ALD(Atomic Layer Deposition).