Impact of Fringing Field on the C-V Characterization of HfO_2 High-K Dielectric MOS (p) Capacitors Fabricated Through Atomic Layer Deposition

摘要

MOS capacitors of high-K gate insulator, HfO_2were fabricated by atomic layer deposition. The potential impact of fringing field on the performance of the device accounting for edge fringing effects (EFE) is studied through C-V characterization and reported in the paper. It is found that fringing fields have considerable impact on performance of the device when dimensions are miniscule and going further down to accommodate more devices on smaller areas. Therefore, the issues accounting for EFE with the consideration of edge direct tunneling (EDT) in the MOS structure become inevitable while the device keeps shrinking.