Method of forming chalcogenide-based thin film using atomic layer deposition process method of forming phase change material layer using the same and method of fabricating phase change memory device

摘要

A method of forming a chalcogenide-based thin film using an atomic layer deposition process, a method of forming a phase change material layer to which the same is applied, and a method of manufacturing a phase change memory device are disclosed. The disclosed method of forming a chalcogenide-based thin film by the atomic layer deposition (ALD) process may include forming a Ge-Te-based material, wherein the forming of the Ge-Te-based material is a reaction in which a substrate is provided. A first step of supplying a first source gas including a Ge precursor having a Ge oxidation state of +2 into the chamber, a second step of supplying a first purge gas into the reaction chamber, and Te in the reaction chamber A third step of supplying a second source gas containing a precursor and a first coreagent gas that promotes a reaction between the Ge precursor and the Te precursor, and a second purge gas in the reaction chamber It may include 4 steps.