...
首页> 外文期刊>Solid state sciences >Growth and characterization of NiO thin films prepared by dc reactive magnetron sputtering
【24h】

Growth and characterization of NiO thin films prepared by dc reactive magnetron sputtering

机译:直流反应磁控溅射制备NiO薄膜的生长与表征

获取原文
获取原文并翻译 | 示例
           

摘要

Cubic nickel oxide (bunsenite) films were deposited on glass substrates by dc reactive magnetron sputtering technique at different sputtering powers. The influence of sputtering power on structural, compositional, optical, and electrical properties of the as deposited films were investigated. The XRD results revealed that the orientation of the NiO films was changed from (200) to (220) with increasing the sputtering power. The crystallinity of the films was also increased with sputtering power. The optical transmittance of NiO films in the visible spectrum was increased up to a sputtering power of 150 W and then decreased slightly at higher sputtering powers. The low electrical resistivity the NiO films was about 5.1 Ω cm at a sputtering power of 150 W.
机译:通过直流反应磁控溅射技术,在不同的溅射功率下,在玻璃基板上沉积了立方氧化镍(铜矿)薄膜。研究了溅射功率对所沉积薄膜的结构,组成,光学和电学性质的影响。 XRD结果表明,随着溅射功率的增加,NiO薄膜的取向从(200)改变为(220)。膜的结晶度也随着溅射功率而增加。 NiO薄膜在可见光谱中的透光率增加到150 W的溅射功率,然后在较高的溅射功率下略有下降。 NiO膜的低电阻率在150 W的溅射功率下约为5.1Ωcm。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号