首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Influence of poly3-octylthiophene (P3OT) film thickness and preparation method on photovoltaic performance of hybrid ITO/CdS/P3OT/Au solar cells
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Influence of poly3-octylthiophene (P3OT) film thickness and preparation method on photovoltaic performance of hybrid ITO/CdS/P3OT/Au solar cells

机译:聚3-辛基噻吩(P3OT)薄膜的厚度和制备方法对ITO / CdS / P3OT / Au混合太阳能电池光伏性能的影响

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摘要

Chemically synthesized poly3-octylthiophene (P3OT) solution was spin-coated (SC) or drop-cast (DC) on cadmium sulfide thin film to form a hybrid junction of transparent conductive glass (indium-tin oxide (ITO))/CdS/P3OT/Au. XRD patterns of DC P3OT films show a couple of peaks at 2y between 81 and 131. It suggests that a long-range order may exist in the slowly dried DC P3OT films. Optical absorption coefficient spectra of P3OT films exhibit the presence of polaron bands in P3OT films with thickness lower than 700 nm, which indicates that thin P3OT films are susceptible to oxygen doping. The microscopically more ordered DC P3OT films show a coplanar photoconductivity, which was absent in the SC P3OT ones. The effect of P3OT film preparation method and ambient conditions was also notable on the photovoltaic performance of CdS/P3OT-based solar cells. The potential barrier of the CdS/P3OT heterojunctions decreased as the P3OT film thickness reduced from 671 to 106 nm, which was related to the diffusion of oxygen into the polymer film. As the P3OT film thickness increased to more than 1000 nm, the open-circuit voltage (VOC) reached to around 1 V, close to the value suggested by fitting the current–voltage curves with the Schottky barrier diode model. But at the same time, the short-circuit current density (JSC) of the same cells is lowered due to the increasing charge recombination effect inside the polymer material. The simple and economic drop-cast preparation method is promising for polymer film deposition in hybrid solar cell fabrication.
机译:化学合成的聚3-辛基噻吩(P3OT)溶液在硫化镉薄膜上旋涂(SC)或滴铸(DC),以形成透明导电玻璃(铟锡氧化物(ITO))/ CdS / P3OT的混合结/金DC P3OT膜的XRD图谱显示在81和131之间的2y处有两个峰。这表明在缓慢干燥的DC P3OT膜中可能存在远距离有序。 P3OT薄膜的光吸收系数谱显示厚度小于700 nm的P3OT薄膜中存在极化子带,这表明P3OT薄膜很容易受到氧掺杂。微观上更有序的DC P3OT膜表现出共面的光电导性,而SC P3OT膜则没有。 P3OT膜的制备方法和环境条件对基于CdS / P3OT的太阳能电池的光伏性能也有显着影响。 CdS / P3OT异质结的势垒随着P3OT膜厚度从671减小到106 nm而降低,这与氧扩散到聚合物膜中有关。当P3OT膜厚度增加到1000 nm以上时,开路电压(VOC)达到1 V左右,接近通过将电流-电压曲线与肖特基势垒二极管模型拟合而建议的值。但是同时,由于聚合物材料内部电荷复合效应的增强,相同电池的短路电流密度(JSC)降低。一种简单且经济的滴铸制备方法有望用于混合太阳能电池制造中的聚合物膜沉积。

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