Non-Quasi Static Measurement in Random Network Carbon Nanotube Thin-Film Transistors for Next-Generation Displays

摘要

We investigated the charge transport properties of the random networks of single-walled carbon nanotube (SWCNT) based thin film transistors (TFTs) by using the transient analysis and compared its non-quasi-static (NQS) characteristics with steady-state characteristics. Using NQS measurement we extracted the dynamic mobility (μ_(dynamic)) and the velocity distribution of the charge carriers. Our results provide additional information to understand charge transport mechanisms in SWCNT-FETs for active-matrix backplaneshis.