Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds

摘要

The depth distribution of free carriers over the HEMT structures with quantum-well layers is studied by electrochemical capacitance-voltage profiling. It is shown that the actual distribution of the concentration of free carriers and their energy spectrum in the HEMT structure channel can be obtained by numerical simulation of the results of profiling based on the self-consistent solution of one-dimensional Schr?dinger and Poisson equations.