Metal-insulator-semiconductor barriers with a nanometer-thick aluminum nitride insulator on p-type silicon

摘要

The state of the interface between p-silicon and a nanometer-thick insulator is analyzed. DLTS spectra, obtained with deep centers in the bulk of the structure and its surface states recharged, are examined. The nature of the noise as a function of the reverse bias is determined for evaluating the possibility of using the structure as a nuclear radiation detector. A conclusion is drawn that the barrier used in the structure has a higher quality when nanometer-thick aluminum nitride films are deposited by dc, rather than ac, magnetron sputtering.