Behavior of Charge in a Buried Insulator of Silicon-on-Insulator Structures Subjected to Electric Fields

摘要

The behavior of charge in a buried oxide of the silicon-on-insulator structures obtained using the Dele-Cut technology was studied by keeping the structures under a voltage with an electric-field strength of 2-5.5 MV/cm. A mobile positive charge drifting under the effect of applied voltage was detected in oxide. The expected charge accumulation in the oxide was not detected. It may be assumed that both of the observed effects are caused by the interaction of residual hydrogen, which is present in the oxide during the preparation of the structures, with traps in the thermal oxides. As a result, the traps become passivated in the buried insulator of the structures; in addition, the charge, which is mobile at room temperature, is introduced into the insulator.