Structural and Photoluminescence Properties of Low-Temperature GaAs Grown on GaAs(100) and GaAs(111)A Substrates

摘要

Undoped, uniformly Si-doped, and d-Si-doped GaAs layers grown by molecular-beam epitaxy on (100)- and (111) A-oriented GaAs substrates at a temperature of 230 degrees C are studied. The As-4 pressure is varied. The surface roughness of the sample is established by atomic-force microscopy; the crystal quality, by X-ray diffraction measurements; and the energy levels of different defects, by photoluminescence spectroscopy at a temperature of 79 K. It is shown that the crystal structure is more imperfect in the case of GaAs(111)A substrates. The effect of the As-4 flux during growth on the structure of low-temperature GaAs grown on different types of substrates is shown as well.