Growth of Diamond Films on Crystalline Silicon by Hot-Filament Chemical Vapor Deposition

M. V. Baidakova; A. Ya. Vul; V. G. Golubev; S. A. Grudinkin; V. G. Melekhin; N. A. Feoktistov; A. Kruger

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Growth of Diamond Films on Crystalline Silicon by Hot-Filament Chemical Vapor Deposition

机译：热丝化学气相沉积法在结晶硅上生长金刚石膜

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The effect of hot-filament chemical vapor deposition conditions on the phase composition of diamond films grown on a silicon substrate was studied. The growth conditions providing the highest content of diamond phase at a growth rate of about 1 μm/h were ascertained.

机译：研究了热丝化学气相沉积条件对在硅基底上生长的金刚石膜的相组成的影响。确定了以约1μm/ h的生长速率提供最高金刚石相含量的生长条件。

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《Semiconductors》 |2002年第6期|共6页
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M. V. Baidakova; A. Ya. Vul; V. G. Golubev; S. A. Grudinkin; V. G. Melekhin; N. A. Feoktistov; A. Kruger;
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1. Growth of Diamond Films on Crystalline Silicon by Hot-Filament Chemical Vapor Deposition [J] . M. V. Baidakova, A. Ya. Vul, V. G. Golubev, Semiconductors . 2002,第6期

机译：热丝化学气相沉积法在结晶硅上生长金刚石膜
2. High-Rate Growth of Single-Crystalline Diamond (100) Films by Hot-Filament Chemical Vapor Deposition with Tantalum Filaments at 3000 ℃ [J] . Tabakoya Taira, Kanada Shohei, Wakui Yusuke, Physica status solidi . 2019,第21期

机译：3000℃热丝化学气相沉积钽丝单晶金刚石（100）薄膜的高速率生长
3. Growth Rate and Electrochemical Properties of Boron-Doped Diamond Films Prepared by Hot-Filament Chemical Vapor Deposition Methods [J] . Hiroshi Nagasaka, Yoshikazu Teranishi, Yuriko Kondo, Transactions of the Japan Society for Computational Engineering and Science . 2016,第5期

机译：热丝化学气相沉积法制备掺硼金刚石薄膜的生长速率和电化学性能
4. Low Temperature growth of poly-crystalline film of Silicon-rich Silicon-Germanium by Reactive Thermal Chemical Vapor Deposition [C] . Jun-ichi Hanna, Jeong-woo Lee, Jianjun Zhang, Symposium F,"Nanocrystalline and Microcrystalline Semiconductor Materials and Structures" . 2001

机译：通过反应热化学气相沉积，低温生长富含含硅含硅膜的多晶硅膜
5. Study of growth and nucleation of chemical vapor deposition diamond and amorphous silicon carbon alloy thin films [D] . Kuang, Yalei 1997

机译：化学气相沉积金刚石和非晶硅碳合金薄膜生长和成核的研究
6. Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Films [O] . Mateusz Œmietana, Robert Mroczyński, Norbert Kwietniewski 2014

机译：射频等离子体增强化学气相沉积（RF PECVD）反应器中样品高度对氮化硅薄膜光学性能和沉积速率的影响
7. Hot-filament chemical vapor deposition of selectively deposited diamond and silicone thin films [O] . Kwan Michael Chiu 1969- 1997

机译：热丝化学气相沉积选择性沉积的金刚石和硅树脂薄膜

Growth of Diamond Films on Crystalline Silicon by Hot-Filament Chemical Vapor Deposition

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