High-Rate Growth of Single-Crystalline Diamond (100) Films by Hot-Filament Chemical Vapor Deposition with Tantalum Filaments at 3000 ℃

摘要

Single-crystalline (100) diamond films are grown using hot-filament chemical vapor deposition at 3000 degrees C for the first time, which is achieved using tantalum filaments. A high growth rate of 10 mu m h(-1) is achieved, which is approximate to 50 times faster than that achieved at 2000 degrees C. The Raman spectrum of the diamond film grown at high rate shows a peak at 1333 cm(-1) with a full-width at half-maximum of 2.8 cm(-1), which is comparable with that of the seed substrate (2.7 cm(-1)). The surfaces of grown films are smooth, without hillocks or nonepitaxial crystallites.