Silicon anisotropic etching in alkaline solutions I. The geometric description of figures developed under etching Si (100) in various solutions

摘要

The influence of alkaline solution concentration, type of cation (K ↑(+) or Na ↑(+) ) and IPA additive on etching rate of various crystallographic planes and shape of etched figures were examined. The simulation of the etching course for concave and convex figures was proposed. The results of the simulation were compared with SEM images. # 1998 Elsevier Science S.A. All rights reserved.