Investigation of Silicon Anisotropic Etching in Alkaline Solutions with Propanol Addition

摘要

Different propanol isomers additives to 26wt.% KOH water solution have been studied. It was stated that addition of both isomers result in changing etching anisotropy of 〈110〉oriented corners on Si (100). For the same etching depth, IPA addition causes higher corner undercutting than 1-propanol addition. Surface topography is better in IPA containing solutions.