FABRICATION OF TiNi/PZT HETEROSTRUCTURE FILMS FOR SMART SYSTEMS

摘要

To integrate functions of shape memory and ferroelectricity, the deposition condition and the crystalline phase for the heterostructure of the sputtered TiNi and sol-gel derived PZT are investigated. The oriented Pt layer, which decrease the crystallization temperature of TiNi layer to 350 deg C, at the interface between TiNi and PZT. The cross-sectional SEM micrograph showed clear interface for each layer and did not show inter-diffusion layer. This heterostructure, TiNi/Pt/PZT/Pt/Ti/SiO_2/Si, film indicated the B2(110) phase of TiNi and the perovskite phase of PZT. PZT layer showed the ferroelectric behaviour, and Pr and Ec determined by the P-E hysteresis curve were 16 #mu#C/cm~2 and 67 Kv/cm, respectively.Further investigations of the shape memory effect in TiNi layer and the transformation characteristics through the interface needed to exert the heterostructure film as the integrated function materials.