...
首页> 外文期刊>JSME International Journal. Series A, Solid mechanics and material engineering >Fabrication of Smart Material PZT Thin Films by RF Magnetron Sputtering Method in Micro Actuators
【24h】

Fabrication of Smart Material PZT Thin Films by RF Magnetron Sputtering Method in Micro Actuators

机译:微致动器中射频磁控溅射法制备智能材料PZT薄膜

获取原文
获取原文并翻译 | 示例
           

摘要

PZT piezoelectric thin films can be promising candidates for microactuators or microsen-sors in MEMS (Micro Electro Mechanical Systems) or NEMS (Nano Electro Mechanical Systems) because of the quick response. In this research, the RF magnetron sputtering method is used for PZT thin films deposition. The sputtering conditions to control the crystalline plane (111) of perovskite structure for PZT to influence the piezoelectric constant can be proposed. Those sputtering conditions such as substrate angle and temperature, Ar/O_2 pressure and flow rate were investigated by the heuristic and experimental design method to fabricate optimum PZT perovskite crystal thin film. The condition of substrate temperature was the most important factor to improve piezoelectric constant. The crystalline structure, surface topography and piezoelectric constant of the deposited PZT were observed by X-ray diffraction structural analysis, atomic force microscope and piezoelectric constant evaluation equipment. PZT thin films with only perovskite structure were obtained. PZT (111) was grown with the increase in substrate temperature, and the piezoelectric property was improved. The elastic modulus of 70 GPa for the deposited PZT found a good agreement with the quoted value for commercial based bulk PZT. We obtained a piezoelectric constant d_(31) = -28 pm/V and a high performance of bimorph actuator.
机译:PZT压电薄膜由于具有快速响应特性,因此有望成为MEMS(微电子机械系统)或NEMS(纳米电子机械系统)中的微致动器或微传感器的理想选择。在这项研究中,RF磁控溅射方法用于PZT薄膜沉积。可以提出控制PZT的钙钛矿结构的晶面(111)影响压电常数的溅射条件。通过启发式和实验设计方法研究了诸如衬底角度和温度,Ar / O_2压力和流速等溅射条件,以制备最佳的PZT钙钛矿晶体薄膜。基板温度的条件是提高压电常数的最重要的因素。通过X射线衍射结构分析,原子力显微镜和压电常数评估设备观察沉积的PZT的晶体结构,表面形貌和压电常数。获得仅具有钙钛矿结构的PZT薄膜。 PZT(111)随着基板温度的升高而生长,并且压电性能得到改善。沉积的PZT的弹性模量为70 GPa,与商用散装PZT的报价具有很好的一致性。我们获得了压电常数d_(31)= -28 pm / V和高性能的双压电晶片执行器。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号