Abstract: Thin film layers of shape memory alloys and ferroelectric ceramics can produce a family of `smart' heterostructures capable of performing both sensing and actuating functions. Important issues in these synthesis of these active structures are the ability to generate the appropriate crystalline phases of each material, while producing defect-free homogeneous high quality films. The compatibility of sol-gel processed Pb(Zr,Ti)O$-3$/ (PZT) thin films with thin film shape memory effect TiNi substrates were investigated. Thin film TiNi was deposited on quartz substrates by physical sputter deposition utilizing a TiNi target in a ultra-high vacuum chamber, and followed by in-situ vacuum annealing. PZT was deposited on TiNi by sol-gel and spin coating processes. The ferroelectric tetragonal phase of PZT was obtained by a 600$DGR@C anneal for 5 m in air. The heterostructures were nominally defect-free, unlike those obtained through deposition onto bulk TiNi substrates.!20
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