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Thin-film heterostructure thermoelectric conversion in group IIa and group IV-VI materials
Thin-film heterostructure thermoelectric conversion in group IIa and group IV-VI materials
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机译:IIa组和IV-VI组材料的薄膜异质结构热电转换
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摘要
Embodiments of a thin-film heterostructure thermoelectric material and methods of fabrication thereof are disclosed. In general, the thermoelectric material is formed in a Group IIa and IV-VI materials system. The thermoelectric material includes an epitaxial heterostructure and exhibits high heat pumping and figure-of-merit performance in terms of Seebeck coefficient, electrical conductivity, and thermal conductivity over broad temperature ranges through appropriate engineering and judicious optimization of the epitaxial heterostructure.
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