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首页> 外文期刊>Scripta materialia >Quantitative X-ray microtomography study of 3-D void growth induced by electromigration in eutectic SnPb flip-chip solder joints
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Quantitative X-ray microtomography study of 3-D void growth induced by electromigration in eutectic SnPb flip-chip solder joints

机译:X射线显微断层摄影术研究共晶SnPb倒装芯片焊点中电迁移引起的3-D空洞生长

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摘要

Vacancy flux in eutectic flip-chip SnPb solder joints driven by electromigration was studied using synchrotron radiation X-ray microtomography technique. The change in void volume and shape in three-dimensional images was measured quantitatively and the product of diffusivity and effective charge number of electromigration in eutectic SnPb alloy was calculated to be 3.3 x 10~9 and 9.5 x 10~9 cm~2 s~(-1) at 100 and 120 °C, respectively. The activation energy of the effective self-diffusivity in SnPb alloy was measured to be 0.66 eV.
机译:利用同步辐射X射线显微照相技术研究了由电迁移驱动的共晶倒装芯片SnPb焊点中的空位通量。定量测量三维图像中空隙体积和形状的变化,计算出共晶SnPb合金的扩散率和电迁移有效电荷数的乘积为3.3 x 10〜9和9.5 x 10〜9 cm〜2 s〜。 (-1)分别在100和120°C下。 SnPb合金中有效自扩散系数的活化能经测量为0.66 eV。

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