Effects of annealing temperature on the microstructure, ferroelectric and dielectric properties of W-doped Na0.5Bi0.5TiO3 thin films

摘要

The effects of annealing temperature on the structure, morphology, ferroelectric and dielectric properties of Na0.5Bi0.5Ti0.99W0.01O3+delta (NBTW) thin films are reported in detail. The films are deposited on indium tin oxide/glass substrates by a sol-gel method and the annealing temperature adopted is in the range of 560-620 degrees C. All the films can be well crystallized into phase-pure perovskite structures and show smooth surfaces without any cracks. Particularly, the NBTW thin film annealed at 600 degrees C exhibits a relatively large remanent polarization (P-r) of 20 mu C/cm(2) measured at 750 kV/cm. Additionally, it shows a high dielectric constant of 608 and a low dielectric loss of 0.094 as well as a large dielectric tunability of 62%, making NBTW thin film ideal in the room-temperature tunable device applications. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.