Effects of annealing temperature on structure and properties of PLBZT ferroelectric thin films synthesized by sol-gel processing

摘要

[Pb_(0.95)(La_(0.6)Bi_(0.4))_(0.05)][Zr_(0.53)Ti_(0.47)]O_3 (PLBZT) ferroelectric thin films have been synthesized on ITO-coated glass by sol-gel processing. Effects of annealing temperature on structure and properties of PLBZT have been investigated. With the increase of annealing temperature from 500°C to 550°C, the remanent polarization Pr increase slightly to the maximum value of 25.4μC/cm~2 due to the improvement in crystallization of PLBZT films. However, when the annealing temperature is more than 550°C, the pyrochlore phase appear and degrade the Pr of PLBZT thin films. The lowest leakage current density of 1.8×10~(-9) A/cm~2 can be observed in PLBZT thin films when the annealing temperature is 550°C.