MANUFACTURING FERROELECTRIC FILM AND FERROELECTRIC THIN FILM ELEMENTS, FERROELECTRIC THIN FILM STRUCTURE AND FERROELECTRIC THIN FILM ELEMENT

摘要

PROBLEM TO BE SOLVED: To easily epitaxially grow a ferroelectric thin film, by forming a TiN with Ti partly substituted by Al as a conductive film, forming a (Ba, Sr)TiO₃ base layer on the TiN film, and depositing a Pb type Perovskite oxide ferroelectric on the base layer. ;SOLUTION: A manufacturing method comprises, steps of forming a TiN film where part of a Ti site is substituted by Al 10% as converted in Al atom by the pulse laser vapor deposition at a pressure of about 10^-5 Torr, substrate temp. of 550-650°C, laser repetition frequency of 5 Hz and laser energy density of 4.5 J/cm²(KrF), growing on the TiN film a (Ba, Sr)TiO₃ thin base film by the pulse laser vapor deposition at a pressure of about 10^-4 Torr, substrate temp. of 550°C, laser repetition frequency of 5 Hz and laser energy density of 5.0 J/cm²(KrF), and forming a Pb type Perovskite oxide ferroelectric thereon.;COPYRIGHT: (C)1999,JPO