Microstructures and electrical properties of a Li-ZnO/BiFeO3 double-layered thin film fabricated by a chemical solution deposition method

摘要

In this report, the structural, microstructural, electrical, dielectric, and ferroelectric properties of a Zn0.88Li0.12O1-delta/BiFeO3 double-layered thin film are reported. A chemical solution deposition method was used to deposit the Zn0.88Li0.12O1-delta/BiFeO3 double-layered thin film on the Pt(111)/ Ti/SiO2/Si(100) substrate. X-ray diffraction and Raman spectroscopic studies indicated the formation of hexagonal wurtzite and rhombohedral perovskite structures for the double-layered thin film. As compared with the BiFeO3 thin film, the Zn0.88Li0.12O1-delta/BiFeO3 thin film exhibited enhanced electrical, dielectric, and ferroelectric properties. The leakage current density value of the Zn0.88Li0.12O1-delta/BiFeO3 double-layered thin film was 1.90 x 10(-4) A/cm(2) at an applied electric field of 100 kV/cm, which was approximately two orders of magnitude lower than that of the BiFeO3 thin film. Moreover, the ferroelectric hysteresis studies revealed a large remnant polarization (2P(r)) (11.3 mu C/cm(2)) and a low coercive electric field (307 kV/cm) for the double-layered thin film. (C) 2015 Elsevier Ltd and Techna Group S.r.l. All rights reserved.