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Relationship between Changes in the Ellilpsometric Parameters and the Surface Potential Barrier of Si(III) Single Crykstals with Submonolayer Coatilngs

机译:亚单层共沉积Si(III)单晶晶体的椭偏参数的变化与表面势垒的关系

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Successive removal of adsorbed gases and native oxide from surfaces of Si(III) single crystals was investigated in situ using the methods of ellipsometry and the retarding Anderson potential. It is found that changes in the ellipsometric parameters are directly proportional to changes in the height and transparency of the surface potential barrier of the single crystals studied. The observed characteristic features of the changes in the temperature dependences of the ellipsometric parameters and the retarding Anderson potential that occur with an increase in the degree of coating of single-crystal surfaces with a submonolayer adsorbate are attributed to changes in the potential barrier transparency and the work function. This approach does not require use of such parameters as thickness, refractive index, and absorption coefficient (which are used in ellipsometry) for description of submonolayer coatings.
机译:使用椭偏仪和阻滞安德森势能,从原位研究了从Si(III)单晶表面连续去除吸附的气体和天然氧化物。发现椭偏参数的变化与所研究的单晶的高度和表面势垒的透明度成正比。观察到的椭圆度参数与温度的依存关系变化的特征特征,以及随着亚单层被吸附物单晶表面覆盖程度的增加而发生的安德森电位延迟特性,归因于势垒透明性和工作功能。该方法不需要使用诸如厚度,折射率和吸收系数的参数(用于椭圆光度法)来描述亚单层涂层。

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