Graphene is an outstanding electronic material, predicted to have a role in post-siliconelectronics. However, owing to the absence of an electronic bandgap, graphene switchingdevices with high on/off ratio are still lacking. Here in the search for a comprehensive conceptfor wafer-scale graphene electronics, we present a monolithic transistor that uses the entirematerial system epitaxial graphene on silicon carbide (0001). This system consists of thegraphene layer with its vanishing energy gap, the underlying semiconductor and their commoninterface. The graphene/semiconductor interfaces are tailor-made for ohmic as well as forschottky contacts side-by-side on the same chip. We demonstrate normally on and normally offoperation of a single transistor with on/off ratios exceeding 10~4 and no damping at megahertzfrequencies. In its simplest realization, the fabrication process requires only one lithographystep to build transistors, diodes, resistors and eventually integrated circuits without the needof metallic interconnects.
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