Cleaved-edge overgrowth of aligned InAs islands on GaAs(110)

摘要

A novel approach for positioning InAs islands on GaAs(l 10) by cleaved-edge overgrowth is reported. The first growth sample contains a strained In_x-Ga_(1-x)As/GaAs superlattice of varying indium fraction and thickness, which acts as a strain nanopattern for the cleaved edge overgrowth. The formation of aligned islands is observed by means of atomic force microscopy. The ordering of the aligned islands and the structure of a single InAs island are found to depend on the properties of the underlying In_xGa_(1-x)As/GaAs superlattice and molecular beam epitaxy growth conditions.