Extremely high aspect ratio GaAs and GaAs/AlGaAs nanowaveguides fabricated using chlorine ICP etching with N2-promoted passivation

摘要

Semiconductor nanowaveguides are the key structure for light-guiding nanophotonics applications. Efficient guiding and confinement of single-mode light in these waveguides require high aspect ratio geometries. In these conditions, sidewall verticality becomes crucial. We fabricated such structures using a top-down process combining electron beam lithography and inductively coupled plasma (ICP) etching of hard masks and GaAs/AlGaAs semiconductors with Al concentrations varying from 0 to 100%. The GaAs/AlGaAs plasma etching was a single-step process using a Cl2/BCl3/Ar gas mixture with various fractions of N2. Scanning electron microscope (SEM) observations showed that the presence of nitrogen generated the deposition of a passivation layer, which had a significant effect on sidewall slope. Near-ideal vertical sidewalls were obtained over a very narrow range of N2, allowing the production of extremely high aspect ratios (>32) for 80 nm wide nanowaveguides.