High-density single-crystalline orthorhombic TiSi nanorods and nanopins have been successfully prepared for the first time on a Ti_5Si_3 layer by chemical vapor deposition, using SiH_4 and TiCl_4 as the precursors. The quadrate nanorods are approximately 0.5 mu m long and 30 nm X 30 nm in area. The nanopins are 0.7-1 mu m long in total, with the quadrate tip about 200 nm long and 50 nm X 50 nm in area. The TiSi nanorods and nanopins grow along the [110] direction of the orthorhombic TiSi crystal from the bottom, with the tip being pushed upwards. The growth process can be defined as a self-induced growth. The self-induction mechanism addressed here expands our understanding of growing nanostructures.
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机译：以SiH_4和TiCl_4为前驱体，通过化学气相沉积法成功地在Ti_5Si_3层上成功制备了高密度单晶正交晶体TiSi纳米棒和纳米销。方形纳米棒的长度约为0.5微米，面积为30 nm X 30 nm。纳米针的总长度为0.7-1微米，方形尖端的长度约为200 nm，面积为50 nm X 50 nm。 TiSi纳米棒和纳米针从底部沿正交晶体TiSi晶体的[110]方向生长，尖端向上推动。生长过程可以定义为自我诱导的生长。此处讨论的自感应机制扩展了我们对生长的纳米结构的理解。
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