Chemical vapor deposition methods for creating a predominantly tisi φ × φ, electrically conductive layer

摘要

a method for creating a uniform layer (60) tisix from a halbleiterwafer (50) in a chemical dampfabscheidungsreaktor includes the following steps: (a)) of a wafer (50) in the reactor; b) introducing selected quantities of gaseous ti (nr2) 4 precursor. gaseous silans and a carrier gas into the reactor, where r is selected from the groupwhich consists of h and a carbon containing radical and the amounts of ti (nr2) 4 precursor and silan are provided in a volume ratio of ti (nr2) 4 to silan of 1 in 300 to 1: 10, the amount of carrier gas is about 50 sccm until around 2000, and at least one inert gas contains sccm and (c) of the reactor at a selected pressure, and a selected temperaturethe effect, the precursor and the silan for separating a film (60) on the wafer (50) on the response to the film (60), and a mixture of tisix and tin, which contains approximately 100 selected temperature until about) and the selected pressure is about 150 mtorr to about 100 torr).