Growth Mechanism of TiSi Nanopins on Ti_5Si_3 by Atmospheric Pressure Chemical Vapor Deposition

摘要

High-density single crystalline orthorhombic TiSi nanopins were successfully synthesized on Ti_5Si_3 by atmospheric pressure chemical vapor deposition, using SiH_4 and TiCl_4 as the precursors. The growth mechanism was also investigated in detail. The results show that the maximum density of TiSi nanopins is obtained at the deposition temperature of 730 °C. TiSi nanopins grow along with [110] direction. The dimensions of quadrate tip of nanopins increase with deposition time, and the shape of the nanopin changes with the concentration of (SiH_4 + TiCl_4). A possible growth process is proposed which is well consistent with the experimental results.