Vapor deposition of silicon oxide by atmospheric pressure chemical vapor deposition method

摘要

The present invention , heating the substrate , two is evaporated at least one precursor containing a monoalkyl silanes having an alkyl group having carbon atoms greater than , to form a stream of evaporated precursors , and the surface of the heated substrate , at about atmospheric pressure , can be contacted with a stream of evaporated precursors to deposit one or more layers containing silicon oxide over the surface of the substrate by , a method is provided for forming a silicon oxide-containing layer on a substrate such as glass . The present invention , in -line float glass process , which is particularly useful for applying the iridescence suppression coatings on glass .