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A study of semiconductor quantum structures by microwave modulated photoluminescence

机译:微波调制光致发光对半导体量子结构的研究

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摘要

Mixed types I-II multiple quantum well structures consist of alternating narrow and wide GaAs wells (NW and WW), separated by AlAs barriers. The transfer of electrons from the NW to the WW results in the formation of two-dimensional electrons from the NW to the WW results in the formation of two-dimensional electron and hole gases (2DEG and 2DHG) at the WW and NW, respectively. The present study investigated the influence of the 2DEG and the 2DHG on the optical properties of the materials. The study utilized double beam photoluminescence (PL) and microwave modulated PL, offering high-resolution spectroscopy and control of the density of the gases and their kinetic energy. The results have shown that the existence of the low-density 2DEG in the WW causes the formation of trions or plasma-like recombination. In addition, electrons transfer through the barrier leading to a barrier-NW indirect recombination emission. The latter is influenced by an electrostatic potential induced by the two-dimensional gases.
机译:I-II型混合量子阱结构由交替的窄和宽GaAs阱(NW和WW)组成,由AlAs势垒隔开。电子从NW到WW的转移导致二维电子从NW到WW的形成分别导致在WW和NW处形成二维电子和空穴气体(2DEG和2DHG)。本研究调查了2DEG和2DHG对材料光学性能的影响。该研究利用了双光束光致发光(PL)和微波调制的PL,提供了高分辨率的光谱学,并控制了气体的密度及其动能。结果表明,WW中低密度2DEG的存在会导致重子的形成或类似等离子体的重组。另外,电子通过势垒转移,导致势垒-NW间接复合发射。后者受到二维气体感应的静电势的影响。

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