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A study of semiconductor quantum structures by microwave modulated photolumenscence

机译:微波调制光致发光对半导体量子结构的研究

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Mixed types I - type II multiple quantum wells (QW) structures consists of alternating narrow- and wide GaAs wells, separated by AlAs barriers. Transfer of electrons from the narrow- to the wide well results in the formation of a two-dimensional electron gas (2DEG) in the wide wells and a hole gas (2DHG) in the narrow ones. The present study investigated the effect of these gases on the various photoluminescence (PL) bands. The study utilized two modulations techniques: double beam PL and microwave modulated PL (MMPL), offering high-resolution spectroscopy, control of the 2DEG density and effective temperature. The results showed that hte formation of a low density 2DEG in the wide wells cause the formation of trions. However, a large density of excess electrons makes mutual collisions with other photo-generated species. causing the dissociation of the trions and excitons. Inaddition, electrons transfer through the barrier gives rise to barrier-well indirect recombination emission.
机译:I型-II型混合多量子阱(QW)结构由交替的窄和宽GaAs阱组成,并被AlAs势垒隔开。电子从窄井向宽井的转移导致在宽井中形成二维电子气(2DEG),在窄井中形成空穴气(2DHG)。本研究调查了这些气体对各种光致发光(PL)波段的影响。该研究利用了两种调制技术:双光束PL和微波调制PL(MMPL),可提供高分辨率光谱,控制2DEG密度和有效温度。结果表明,在宽孔中低密度2DEG的形成会导致tri的形成。但是,大量的过量电子会与其他光生物质相互碰撞。导致tri和激子解离。另外,电子通过势垒转移会引起势垒阱间接复合发射。

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