QUANTUM WELL STRUCTURE, OPTICAL CONFINEMENT TYPE QUANTUM WELL STRUCTURE, SEMICONDUCTOR LASER, DISTRIBUTED FEEDBACK SEMICONDUCTOR LASER, SPECTROGRAPH, AND MANUFACTURING METHOD OF THE QUANTUM WELL STRUCTURE

摘要

PROBLEM TO BE SOLVED: To provide a quantum well structure capable of improving performance of characteristics to obtain the quantum well structure having a crystal with a large In composition thicker than conventional ones as a quantum well layer, an optical confinement type quantum well structure, semiconductor laser, distributed feedback semiconductor laser, a spectrograph and a manufacturing method of the quantum well structure.;SOLUTION: In the quantum well structure formed by an organic metal vapor growth method on an InP substrate 13 and containing a quantum well layer 10 having a grating constant larger by 2% or more than a grating constant of the InP substrate 13, the quantum well layer 10 is formed at a growth temperature of 440 to 510C and at a growth rate of 1.5 m/hour or larger.;COPYRIGHT: (C)2009,JPO&INPIT