Photoluminescence and I-V characteristics of a CdS-nanoparticles-porous-silicon heterojunction

摘要

Chemically capped CdS nanoparticles are embedded in porous silicon (PS) by a dip coating method. Atomic force microscopy measurements reveal that the PS surface is covered with CdS nanoparticles forming well-defined rectangular blocks of nearly uniform size (200 X 200 nm~2). Photoelectron spectroscopy and energy dispersive x-ray analysis confirm the presence of CdS in PS. Optical and electrical properties of the heterojunctions so-formed are investigated. Junction characteristics show that the composite so-formed exhibits very forward current density (145 mA cm~(-2)) and high reverse breakdown voltage (15 V).