Comparison of I-V Characteristics of the Fabricated SnS/Si and SnS:Ag/Si Heterojunction Solar Cell Under Dark and Illumination

摘要

SnS and SnS-Ag nanocomposite were synthesized by a cost-effective solvothermal technique. Structural properties were characterized by x-ray diffraction (XRD), transmission electron microscopy (TEM) and field emission scanning electron microscopy (FESEM). Elemental composition was confirmed by electron diffraction x-ray analysis (EDAX). The optical properties were characterized by UV-Vis absorption spectra, photoluminescence spectra (PL) and time-correlated single-photon counting (TCSPC). XRD results suggest that the samples are in an orthorhombic structural phase. TEM results indicate that quantum dot-like particles (5 nm to 8 nm) are observed in both SnS and SnS-Ag nanostructures. The crystalline nature of the samples was confirmed by selected-area electron diffraction (SAED). EDAX analysis confirmed that Ag is present in SnS-Ag nanocomposite. From optical absorption study, it is clear that SnS-Ag nanocomposite is a better absorber in sunlight than SnS nanocrystal. A decrease in the band gap of SnS-Ag nanocomposite was observed compared to SnS. The PL study indicates that a peak shift of SnS-Ag nanocomposite was observed towards the higher wavelength side. Our aim is to grow cost-effective heterojunction solar cells with good efficiency. J-V characteristics of the fabricated SnS/Si and SnS:Ag/Si heterojunction solar cells have been studied under dark as well as under illumination. Open-circuit voltage (V-oc), short-circuit current (J(sc)), fill factor (FF) as well as efficiency (eta) were determined.