Silicon nanoparticles ( Si-nps) embedded in silicon oxide matrix were created using silicon-rich oxide ( SRO) films deposited by low pressure chemical vapour deposition ( LPCVD) followed by a thermal annealing at 1100 degrees C. The electrical properties were studied using metal-oxide-semiconductor ( MOS) structures with the SRO films as the active layers. Capacitance versus voltage (C-V) exhibited downward and upward peaks in the accumulation region related to charge trapping and de-trapping effects of Si-nps, respectively. Current versus voltage (I-V) measurements showed fluctuations in the form of spike-like peaks and a clear staircase at room temperature. These effects have been related to the Coulomb blockade ( CB) effect in the silicon nanoparticles embedded in SRO films. The observed quantum effects are due to 1 nm nanoparticles.
展开▼
