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Graphene on insulating crystalline substrates

机译:绝缘晶体衬底上的石墨烯

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摘要

We show that it is possible to prepare and identify ultra-thin sheets of graphene on crystalline substrates such as SrTiO_3, TiO_2, Al_2O_3 and CaF_2 by standard techniques (mechanical exfoliation, optical and atomic force microscopy). On the substrates under consideration we find a similar distribution of single layer, bilayer and few-layer graphene and graphite flakes as with conventional SiO_2 substrates. The optical contrast C of a single graphene layer on any of those substrates is determined by calculating the optical properties of a two-dimensional metallic sheet on the surface of a dielectric, which yields values between C = _1.5% (G/TiO_2) and C = _8.8% (G/CaF_2). This contrast is in reasonable agreement with experimental data and is sufficient to make identification by an optical microscope possible. The graphene layers 'cover the crystalline substrate in a carpet-like mode and the height of single layer graphene on any of the crystalline substrates as determined by atomic force microscopy is d_(SLG) = 0.34 nm and thus much smaller than on SiO_2.
机译:我们表明,可以通过标准技术(机械剥离,光学和原子力显微镜)在晶体基质(如SrTiO_3,TiO_2,Al_2O_3和CaF_2)上制备和鉴定超薄石墨烯片。在所考虑的基材上,我们发现单层,双层和几层石墨烯和石墨薄片的分布与常规SiO_2基材相似。通过计算电介质表面上的二维金属薄板的光学特性,可以确定在任何这些衬底上的单个石墨烯层的光学对比度C,其值介于C = _1.5%(G / TiO_2)之间C = _8.8%(G / CaF_2)。该对比与实验数据合理地吻合,并且足以使通过光学显微镜进行识别成为可能。石墨烯层以地毯状方式覆盖晶体基底,通过原子力显微镜确定的任何晶体基底上的单层石墨烯的高度为d_(SLG)= 0.34 nm,因此比SiO_2小得多。

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