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Optimization of periodic column growth in glancing angle deposition for photonic crystal fabrication

机译:光子晶体制造中掠角沉积中周期性柱生长的优化

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We investigate the growth of periodically aligned silicon microstructures for the fabrication of square spiral photonic crystals using the glancing angle deposition phi-sweEP 4process. We report the optimization of the phi-sweEP 4offset angle for fabrication of microstructures with more precise geometry. The effects of varying the sweEP 4offset angle of the phi-sweEP 4process are studied for films deposited onto a square lattice array of growth seeds. To represent one growth segment of the phi-sweEP 4process, we fabricate 15 nm silicon thin films using several azimuthal substrate offsets from 0 degrees to 45 degrees at a vapor incidence angle of 85 degrees. We also deposit silicon square spirals on square lattice arrays with the phi-sweep method, using various sweEP 4offset angles from gamma = 0 degrees to 45 degrees. We find that using an offset angle of gamma = 26.5 degrees optimizes the shadowing geometry, which minimizes anisotropic broadening, producing greater quality photonic crystal structures. From normal incidence reflection spectroscopy, a maximum full width at half-maximum of 273 +/- 3 nm and a relative peak width (Delta lambda/lambda) of 16.1 +/- 0.1% were found for a sweEP 4offset angle of gamma = 26.5 degrees.
机译:我们使用掠射角沉积phi-sweEP 4工艺研究了用于制造方形螺旋光子晶体的周期性排列的硅微结构的生长。我们报告了phi-sweEP 4offset角的优化,用于制造具有更精确几何形状的微结构。对于沉积在生长种子的方格子阵列上的薄膜,研究了phi-sweEP 4过程的sweEP 4偏移角度变化的影响。为了代表phi-sweEP 4工艺的一个生长段,我们使用几种方位角基板偏移量从0度到45度以85度的蒸汽入射角制作了15 nm的硅薄膜。我们还使用phi-sweep方法,使用从gamma = 0度到45度的各种sweEP 4偏移角度,将硅正方形螺旋线沉积在正方形晶格阵列上。我们发现,使用gamma = 26.5度的偏移角可以优化阴影几何形状,从而最大程度地减少各向异性加宽,从而产生更高质量的光子晶体结构。从法向入射反射光谱学中,对于sweEP 4偏移角gamma = 26.5,发现半峰最大最大宽度为273 +/- 3 nm,相对峰宽(Δλ/λ)为16.1 +/- 0.1%。度。

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