Ultrafast VLS growth of epitaxial β-Ga_2O_3 nanowires

摘要

Well-defined monoclinic nanostructures of β-Ga_2O_3were grown in a chemical vapor depositionapparatus using metallic gallium and oxygen as sources. Stable growth conditions werededuced for nanorods, nanoribbons, nanowires and cones. The types of nanostructures aredetermined by the growth temperature. We suppose that the vapor–solid growth mechanismrules the growth of nanoribbons and rods. For the nanowires we observed catalytic golddroplets atop, characteristic for the VLS growth mechanism with an extremely high growth rateof up to 10 μm min~(-1). Nanowires grown on Al_2O_3substrates showed an excellent tendency togrow epitaxially, mapping the hexagonal symmetry of Al_2O_3(0001).