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Synthesis of few-layer graphene via microwave plasma-enhanced chemical vapour deposition

机译:微波等离子体增强化学气相沉积法合成几层石墨烯

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摘要

If graphene is ever going to live up to the promises of future nanoelectronic devices, an easy and cheap route for mass production is an essential requirement. A way to extend the capabilities of plasma-enhanced chemical vapour deposition to the synthesis of freestanding few-layer graphene is presented. Micrometre-wide flakes consisting of four to six atomic layers of stacked graphene sheets have been synthesized by controlled recombination of carbon radicals in a microwave plasma. A simple and highly reproducible technique is essential, since the resulting flakes can be synthesized without the need for a catalyst on the surface of any substrate that withstands elevated temperatures up to 700 degrees C. A thorough structural analysis of the flakes is performed with electron microscopy, x-ray diffraction, Raman spectroscopy and scanning tunnelling microscopy. The resulting graphene flakes are aligned vertically to the substrate surface and grow according to a three-stEP 30process, as revealed by the combined analysis of electron microscopy and x-ray photoelectron spectroscopy.
机译:如果石墨烯能够实现未来纳米电子设备的承诺,那么简单且廉价的大规模生产途径是必不可少的要求。提出了一种将等离子增强化学气相沉积的功能扩展到独立式几层石墨烯合成的方法。通过在微波等离子体中控制碳自由基的重组,合成了由四到六个原子层的堆叠石墨烯片组成的微米级薄片。简单且高度可重复的技术是必不可少的,因为可以在不需任何催化剂的情况下就将合成的薄片合成为耐高温(最高至700摄氏度)的基材表面。使用电子显微镜对薄片进行彻底的结构分析,X射线衍射,拉曼光谱和扫描隧道显微镜。如通过电子显微镜和X射线光电子能谱的组合分析所揭示的,所得的石墨烯薄片垂直于基板表面排列并根据三步法30工艺生长。

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